ec 73 2 n60 n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 1 o f 6 4 g 1 8 n - rev.f001 features 600v, 2a, rds(on)(max.) = 4.2 @vgs = 10v low crss fa s t switching 100 % avalanche tested applications ? charger ? standby power. absolute maximum ratings ( tc = 25 symbol parameter limit unit to - 220f to - 251 to - 252 vds drain C source voltage a 600 v vgs gate - source voltage 30 v id drain current - continuous, t c =25 2 a drain current - continuous, t c =100 1.2 a idm drain current - pulsed b 8 a pd maximum power dissipation @ t j =25 23 34 w e as single pulsed avalanche energy c 115 mj t j , t stg operating and store temperature range - 55 to 150 thermal characteristics symbol parameter value unit r j c thermal resistance, junction - case max. 5.56 3.7 /w r j a thermal resistance, junct ion - ambient max. 120 110 /w
ec 73 2 n60 n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 2 o f 6 4 g 1 8 n - rev.f001 symbol parameter test condition min. typ. max. unit bv dss drain - source breakdown voltage v gs = 0v, i d = 250 a 600 - - v i dss zero gate voltage drain current v ds = 600v, v gs = 0v - - 1 a i gssf forward gate body leakage current v ds = 0v, v gs = 30v - - 100 na i gssr reverse gate body leakage current v ds = 0v, v gs = - 30v - - - 100 na v gs (th) gate threshold voltage v ds = v gs , i d = 250a 2 3.27 4 v r ds (on) static drain - source on - resistance d v gs = 10v, i d = 1a - 3.67 4.2 g fs forward t ransconductance d v ds = 15v, i d = 1a - 1.2 10 s ciss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz - 276 - pf coss output capacitance - 65 - pf crss reverse transfer capacitance - 15 - pf td(on) turn - on delay time v dd = 300v, i d = 2a, r g = 10 , v gs = 10v - 20.1 - ns tr turn - on rise time - 9.2 - ns td(off) turn - off delay time - 24.7 - ns tf turn - off fall time - 7.5 - ns qg total gate charge v ds = 300v, i d = 2a, v gs = 10v - 4.8 - nc qgs gate - source charge - 1.6 - nc qgd gate - drain charge - 2.0 - nc electrical characteristics ( t j = 25c unless otherwise noted ) off characteristics on characteristics dynamic characteristics switching characteristics
ec 73 2 n60 n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 3 o f 6 4 g 1 8 n - rev.f001 i s drain - source diode forward continuous current v gs = 0v - - 2 a i sm maximum pulsed current v gs = 0v - - 8 a v sd drain - source di ode forward voltage v gs = 0v, i s = 2a - 0.81 1.4 v drain - sour ce diode characteristics notes : a. t j = +25 c to +150 c. b. repetitive rating; pulse width limited by maximum junction temperature. c. i sd = 2.0a di/dt < 100 a/s, v dd < bv dss , t j < +150 c. d. pulse width < 300 s; duty cycle < 2%. e. l=30mh, v dd =145v, i as =2.52a, r g =25 starting t j =25 c. v ds , drain - source voltage (v) for ec732n60ar figure 1 - 1 maximum safe operating area v ds , drain - source voltage (v) for EC732N60A3R / ec732n60a4r figure 1 - 2 maximum safe operating area figure 2. norm alized on - resistance variationwith temperature figure 3. gate threshold vari ation with temperature
ec 73 2 n60 n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 4 o f 6 4 g 1 8 n - rev.f001 figure 4. capacitance characteristics figure 6. on - state characteristics figure 7. body diode forward voltage variation with source current figure 8. transfer characteristics figure 5. gate charge characteristics
ec 73 2 n60 n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 5 o f 6 4 g 1 8 n - rev.f001 square pulse duration (sec) for ec732n60ar figure 9 - 2 . normalized effective transient ther mal impedance with pulse duration figure 9 - 3 . normalized effective transient thermal impedance with pulse duration square pulse duration (sec) for ec732 n60 a3r / ec73 2n60 a4r figure 10 . maximum drain current vs. case temperature
ec 73 2 n60 n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 6 o f 6 4 g 1 8 n - rev.f001 order ing information part number package marking m arking information ec 732n60ar to - 220f - 3l 73 2n60 llll l yyww 1. lllll lot no. 2. yy year code 3. ww week code ec 732n60a3r to - 251 - 3l ec 732n60a 4 r to - 2 52 - 3l
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